| Typicality: | 0.268 |
| Saliency: | 0.043 |
| further | 4 | manner |
| on the semiconductor wafer | 4 | location |
| apparatus → be configured to perform → a low-temperature ion implantation | 4 |
| negative | neutral | positive |
| 0.018 | 0.905 | 0.077 |
| Raw frequency | 4 |
| Normalized frequency | 0.043 |
| Modifier score | 0.500 |
| Perplexity | 31.922 |