| potential → ReceivesAction → measured | 0.57 | |
| potential → ReceivesAction → applied to electrode | 0.56 | |
| potential → ReceivesAction → generated | 0.45 | |
| potential → ReceivesAction → increased | 0.45 | |
| potential → ReceivesAction → applied by first power source | 0.36 | |
| potential → ReceivesAction → fixed | 0.33 | |
| potential → ReceivesAction → applied across the chalcogenide… | 0.30 | |
| potential → ReceivesAction → applied in continuous frames | 0.30 | |
| potential → ReceivesAction → shown by solid line | 0.30 | |
| potential → ReceivesAction → shown in fig | 0.30 | |
| potential → ReceivesAction → applied to first electrode | 0.25 | |
| potential → ReceivesAction → applied to the gate | 0.25 | |
| potential → ReceivesAction → charged on other hand | 0.25 | |
| potential → ReceivesAction → floated for short period of time | 0.25 | |
| potential → ReceivesAction → written to the retention node | 0.25 | |
| potential → ReceivesAction → applied to reservoir | 0.09 |