| saturation | 0.67 |
| off state | 0.60 |
| active region | 0.55 |
| conducting state | 0.46 |
| the offstate | 0.41 |
| first data state | 0.35 |
| act as switch | 0.76 |
| conduct current | 0.70 |
| get smaller | 0.62 |
| amplify current | 0.57 |
| regulate current or vol… | 0.56 |
| belong to standard cell | 0.54 |
| get hot | 0.54 |
| replace vacuum tubes | 0.54 |
| act as amplifier | 0.52 |
| act as closed switch | 0.49 |
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| source | 0.71 |
| gate | 0.65 |
| a gate electrode | 0.62 |
| three terminals | 0.59 |
| three connections | 0.57 |
| emitter | 0.49 |
| collector | 0.48 |
| a source terminal | 0.48 |
| first terminal | 0.46 |
| characteristic | 0.46 |
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| more voltage | 0.25 |
| rendered conductive | 0.75 |
| good | 0.70 |
| open | 0.67 |
| identical | 0.66 |
| small | 0.64 |
| nonconductive | 0.43 |
| symmetrical | 0.41 |
| sensitive | 0.41 |
| smaller | 0.41 |
| fast | 0.39 |
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| less resistance | 0.23 |
| a semiconductor device | 0.59 |
| device | 0.51 |
| electronic component | 0.44 |
| electronic device | 0.43 |
| key active component | 0.36 |
| solid state devices | 0.34 |
| a three-terminal device | 0.34 |
| n-channel metal oxide s… | 0.28 |
| discrete devices | 0.25 |
| a 3v device | 0.25 |
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| germanium | 0.62 |
| semiconductor materials | 0.43 |
| pure silicon | 0.41 |
| material | 0.37 |
| amorphous silicon | 0.28 |
| connected in parallel | 0.74 |
| used as switch | 0.72 |
| used to amplify electro… | 0.72 |
| biased | 0.70 |
| saturated | 0.69 |
| used in computer | 0.66 |
| switched | 0.65 |
| selected | 0.63 |
| used as amplifier | 0.63 |
| connected in series | 0.62 |
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| previous one | 0.25 |