| Typicality: | 0.347 |
| Saliency: | 0.228 |
| by dry etching | 3 | manner |
| trench → be formed in → the semiconductor substrate | 5 |
| trench → be formed through → the semiconductor layers | 3 |
| negative | neutral | positive |
| 0.107 | 0.843 | 0.050 |
| Raw frequency | 8 |
| Normalized frequency | 0.228 |
| Modifier score | 0.500 |
| Perplexity | 190.470 |