cathode
→
ReceivesAction
→
formed
|
0.81
|
|
cathode
→
ReceivesAction
→
connected
|
0.80
|
|
cathode
→
ReceivesAction
→
heated
|
0.73
|
|
cathode
→
ReceivesAction
→
connected in parallel
|
0.65
|
|
cathode
→
ReceivesAction
→
made
|
0.61
|
|
cathode
→
ReceivesAction
→
charged
|
0.60
|
|
cathode
→
ReceivesAction
→
connected to anode
|
0.60
|
|
cathode
→
ReceivesAction
→
shown in fig
|
0.55
|
|
cathode
→
ReceivesAction
→
prepared
|
0.54
|
|
cathode
→
ReceivesAction
→
connected to negative terminal
|
0.54
|
|
cathode
→
ReceivesAction
→
removed
|
0.48
|
|
cathode
→
ReceivesAction
→
formed on the substrate
|
0.47
|
|
cathode
→
ReceivesAction
→
grounded
|
0.47
|
|
cathode
→
ReceivesAction
→
connected in series
|
0.46
|
|
cathode
→
ReceivesAction
→
formed in the vapor deposition …
|
0.45
|
|
cathode
→
ReceivesAction
→
coupled to the transistor's col…
|
0.44
|
|
cathode
→
ReceivesAction
→
protected
|
0.44
|
|
cathode
→
ReceivesAction
→
connected to the wiring
|
0.42
|
|
cathode
→
ReceivesAction
→
disposed over the anode
|
0.40
|
|
cathode
→
ReceivesAction
→
formed by evaporation
|
0.40
|
|
cathode
→
ReceivesAction
→
heated by filament
|
0.38
|
|
cathode
→
ReceivesAction
→
positioned on second surface
|
0.38
|
|
cathode
→
ReceivesAction
→
provided in order
|
0.38
|
|
cathode
→
ReceivesAction
→
coupled to the capacitor
|
0.36
|
|
cathode
→
ReceivesAction
→
coupled to the source
|
0.36
|
|
cathode
→
ReceivesAction
→
formed on the el film
|
0.36
|
|
cathode
→
ReceivesAction
→
immersed in electrolyte
|
0.36
|
|
cathode
→
ReceivesAction
→
plated
|
0.36
|
|
cathode
→
ReceivesAction
→
positioned over the knee
|
0.36
|
|
cathode
→
ReceivesAction
→
connected to respective connect…
|
0.35
|
|
cathode
→
ReceivesAction
→
connected to negative power sup…
|
0.33
|
|
cathode
→
ReceivesAction
→
measured against cylindrical ta…
|
0.33
|
|
cathode
→
ReceivesAction
→
measured against h2so4 electrol…
|
0.33
|
|
cathode
→
ReceivesAction
→
placed on contralateral supra-o…
|
0.33
|
|
cathode
→
ReceivesAction
→
connected through resistor
|
0.29
|
|
cathode
→
ReceivesAction
→
deposited as metallic coating
|
0.29
|
|
cathode
→
ReceivesAction
→
disposed in electrical contact
|
0.29
|
|
cathode
→
ReceivesAction
→
formed in succession
|
0.29
|
|
cathode
→
ReceivesAction
→
laminated
|
0.29
|
|
cathode
→
ReceivesAction
→
reduced
|
0.29
|
|
cathode
→
ReceivesAction
→
selected
|
0.29
|
|
cathode
→
ReceivesAction
→
separated
|
0.29
|
|
cathode
→
ReceivesAction
→
spaced
|
0.29
|
|
cathode
→
ReceivesAction
→
arranged in same horizontal pla…
|
0.25
|
|
cathode
→
ReceivesAction
→
bonded to the membrane
|
0.25
|
|
cathode
→
ReceivesAction
→
configured to produce hydrogen …
|
0.25
|
|
cathode
→
ReceivesAction
→
connected to first end of the i…
|
0.25
|
|
cathode
→
ReceivesAction
→
connected to second voltage con…
|
0.25
|
|
cathode
→
ReceivesAction
→
connected to the drain
|
0.25
|
|
cathode
→
ReceivesAction
→
connected with first semiconduc…
|
0.25
|
|
cathode
→
ReceivesAction
→
coupled to the gate of n-channe…
|
0.25
|
|
cathode
→
ReceivesAction
→
dried
|
0.25
|
|
cathode
→
ReceivesAction
→
formed by co
|
0.25
|
|
cathode
→
ReceivesAction
→
held at ground
|
0.25
|
|
cathode
→
ReceivesAction
→
located on second semiconductor…
|
0.25
|
|
cathode
→
ReceivesAction
→
placed over right dlpfc
|
0.25
|
|
cathode
→
ReceivesAction
→
positioned within cylindrical a…
|
0.25
|
|
cathode
→
ReceivesAction
→
stacked upon one another
|
0.25
|
|
cathode
→
ReceivesAction
→
washed
|
0.25
|
|
cathode
→
ReceivesAction
→
operated in zener mode
|
0.16
|
|