---

transistor → CapableOf → act as switch	0.76
transistor → HasProperty → rendered conductive	0.75
transistor → ReceivesAction → connected in parallel	0.74
transistor → ReceivesAction → used as switch	0.72
transistor → ReceivesAction → used to amplify electronic signals	0.72
transistor → HasA → source	0.71
transistor → CapableOf → conduct current	0.70
transistor → ReceivesAction → biased	0.70
transistor → HasProperty → good	0.70
transistor → ReceivesAction → saturated	0.69
bipolar transistor (subgroup of transistor) → ReceivesAction → invented in 1947	0.68
bipolar transistor (subgroup of transistor) → HasProperty → superior	0.68
bipolar transistor (subgroup of transistor) → ReceivesAction → used in modern electronics	0.68
npn transistor (subgroup of transistor) → ReceivesAction → formed	0.68
pnp transistor (subgroup of transistor) → HasA → similar characteristics	0.68
base (aspect of transistor) → ReceivesAction → doped	0.68
characteristic (aspect of transistor) → ReceivesAction → improved	0.68
collector (aspect of transistor) → ReceivesAction → connected through resistor	0.68
lead (aspect of transistor) → ReceivesAction → shown in fig	0.68
region (aspect of transistor) → ReceivesAction → surrounded by dashed line	0.68
transistor → HasProperty → open	0.67
transistor → AtLocation → saturation	0.67
transistor → ReceivesAction → used in computer	0.66
transistor → HasProperty → identical	0.66
transistor → HasA → gate	0.65
transistor → ReceivesAction → switched	0.65
transistor → HasProperty → small	0.64
transistor → ReceivesAction → selected	0.63
transistor → ReceivesAction → used as amplifier	0.63
transistor → ReceivesAction → connected in series	0.62
transistor → CapableOf → get smaller	0.62
transistor → MadeOf → germanium	0.62
region (aspect of transistor) → ReceivesAction → formed	0.62
transistor → HasA → a gate electrode	0.62
transistor → ReceivesAction → tested	0.60
base (aspect of transistor) → ReceivesAction → connected through resistor	0.60
transistor → AtLocation → off state	0.60
transistor → ReceivesAction → isolated	0.59
transistor → IsA → a semiconductor device	0.59
transistor → HasA → three terminals	0.59
transistor → ReceivesAction → connected	0.58
transistor → ReceivesAction → matched	0.58
transistor → CapableOf → amplify current	0.57
transistor → ReceivesAction → provided	0.57
transistor → ReceivesAction → installed	0.57
transistor → HasA → three connections	0.57
terminal (aspect of transistor) → ReceivesAction → connected through capacitor	0.56
transistor → CapableOf → regulate current or voltage flow	0.56
transistor → ReceivesAction → invented in 1947	0.55
transistor → AtLocation → active region	0.55
transistor → ReceivesAction → used to amplify electrical power	0.54
transistor → ReceivesAction → used on n-channel	0.54
transistor → CapableOf → belong to standard cell	0.54
transistor → CapableOf → get hot	0.54
transistor → ReceivesAction → designed	0.54
transistor → CapableOf → replace vacuum tubes	0.54
transistor → ReceivesAction → closed	0.54
base (aspect of transistor) → HasProperty → thin	0.54
region (aspect of transistor) → ReceivesAction → irradiated with laser light	0.54
transistor → ReceivesAction → driven	0.54
transistor → ReceivesAction → shown in fig	0.53
transistor → CapableOf → act as amplifier	0.52
terminal (aspect of transistor) → ReceivesAction → coupled to first voltage reference	0.52
terminal (aspect of transistor) → ReceivesAction → connected	0.52
transistor → ReceivesAction → connected to the source	0.51
transistor → IsA → device	0.51
transistor → ReceivesAction → packaged	0.50
gain (aspect of transistor) → HasProperty → high	0.50
characteristic (aspect of transistor) → ReceivesAction → combined in suitable manner	0.50
lead (aspect of transistor) → ReceivesAction → connected	0.49
transistor → ReceivesAction → programmed	0.49
transistor → CapableOf → act as closed switch	0.49
transistor → HasA → emitter	0.49
transistor → ReceivesAction → completed	0.48
gain (aspect of transistor) → ReceivesAction → reduced	0.48
transistor → HasA → collector	0.48
transistor → ReceivesAction → formed on the substrate	0.48
transistor → HasA → a source terminal	0.48
terminal (aspect of transistor) → ReceivesAction → connected to the gate of the pmosfet	0.47
transistor → ReceivesAction → shown	0.47
transistor → ReceivesAction → turned on in response	0.46
transistor → HasA → first terminal	0.46
fet → IsA → transistor	0.46
transistor → CapableOf → provide second current path	0.46
transistor → AtLocation → conducting state	0.46
transistor → HasA → characteristic	0.46
transistor → ReceivesAction → invented by john bardeen	0.46
transistor → ReceivesAction → used in circuit	0.45
base (aspect of transistor) → ReceivesAction → coupled through a 20 kq resistor	0.45
transistor → ReceivesAction → shorted	0.45
transistor → ReceivesAction → miniaturized	0.45
transistor → CapableOf → handle more current	0.45
transistor → HasA → three leads	0.45
transistor → ReceivesAction → replaced	0.45
transistor → ReceivesAction → placed on chip	0.45
transistor → ReceivesAction → connected to one another	0.45
gain (aspect of transistor) → ReceivesAction → adjusted	0.45
transistor → CapableOf → use less power	0.44
collector (aspect of transistor) → ReceivesAction → doped	0.44
transistor → ReceivesAction → invented by william shockley	0.44
transistor → IsA → electronic component	0.44
transistor → ReceivesAction → turned off on other hand	0.44
transistor → HasA → a control terminal	0.44
transistor → ReceivesAction → contained within the region	0.43
transistor → HasA → a gate terminal	0.43
transistor → ReceivesAction → invented by walter brattain	0.43
transistor → IsA → electronic device	0.43
transistor → HasProperty → nonconductive	0.43
transistor → MadeOf → semiconductor materials	0.43
gain (aspect of transistor) → ReceivesAction → increased	0.42
gain (aspect of transistor) → ReceivesAction → based on a set of control signals	0.42
transistor → ReceivesAction → used in communication	0.42
transistor → ReceivesAction → invented at bell labs	0.41
transistor → AtLocation → the offstate	0.41
lead (aspect of transistor) → ReceivesAction → soldered	0.41
transistor → HasProperty → symmetrical	0.41
transistor → CapableOf → invert the signal	0.41
transistor → MadeOf → pure silicon	0.41
terminal (aspect of transistor) → ReceivesAction → connected to first storage circuit	0.41
transistor → HasProperty → sensitive	0.41
transistor → HasA → source/drain regions	0.41
transistor → HasProperty → smaller	0.41
region (aspect of transistor) → ReceivesAction → shown in fig	0.40
region (aspect of transistor) → ReceivesAction → formed in the substrate	0.40
gain (aspect of transistor) → HasProperty → lower	0.40
collector (aspect of transistor) → HasProperty → negative	0.40
base (aspect of transistor) → HasProperty → low	0.40
base (aspect of transistor) → ReceivesAction → connected to the ground	0.40
base (aspect of transistor) → ReceivesAction → connected to emitter	0.40
transistor → CapableOf → conduct electricity	0.40
transistor → HasA → a gate dielectric	0.40
transistor → ReceivesAction → destroyed	0.40
transistor → CapableOf → restrict the flow of electrical current	0.39
transistor → CapableOf → form inverter	0.39
transistor → ReceivesAction → connected to gate	0.39
transistor → HasProperty → fast	0.39
transistor → CapableOf → provide power	0.39
gain (aspect of transistor) → HasProperty → low	0.38
transistor → CapableOf → comprise thin-film transistors	0.38
transistor → ReceivesAction → switched fully-on	0.38
transistor → ReceivesAction → used in first circuit	0.38
transistor → CapableOf → float on the cursor	0.38
transistor → HasA → structure	0.38
transistor → HasProperty → adjacent	0.38
transistor → ReceivesAction → illustrated as a sandwich of p silicon	0.38
gain (aspect of transistor) → CapableOf → vary with frequency	0.37
transistor → MadeOf → material	0.37
transistor → CapableOf → form the memory cell	0.37
circuit → HasA → transistor	0.37
terminal (aspect of transistor) → ReceivesAction → connected to each other	0.36
terminal (aspect of transistor) → ReceivesAction → connected to ground	0.36
terminal (aspect of transistor) → ReceivesAction → connected to fifth conductive line	0.36
base (aspect of transistor) → HasProperty → negative	0.36
transistor → HasA → first source/drain region	0.36
transistor → ReceivesAction → connected to the input1	0.36
transistor → HasProperty → new	0.36
transistor → IsA → key active component	0.36
transistor → ReceivesAction → connected in common emitter configuration	0.36
transistor → ReceivesAction → coupled to receive back bias	0.36
transistor → CapableOf → make the connection	0.35
transistor → CapableOf → receive signal	0.35
transistor → ReceivesAction → energized	0.35
transistor → CapableOf → perform same function	0.35
transistor → ReceivesAction → connected on single chip	0.35
transistor → HasA → 3 pins	0.35
transistor → ReceivesAction → used in radio	0.35
transistor → AtLocation → first data state	0.35
collector (aspect of transistor) → HasProperty → positive	0.35
collector (aspect of transistor) → ReceivesAction → bridged by diode	0.34
transistor → CapableOf → revolutionize the field of electronics	0.34
transistor → HasA → two pn junctions	0.34
transistor → ReceivesAction → switched fully-off	0.34
transistor → IsA → solid state devices	0.34
transistor → CapableOf → operate in linear region	0.34
transistor → CapableOf → prevent leakage current	0.34
transistor → HasProperty → unmarked	0.34
transistor → CapableOf → usher in second generation of computers	0.34
transistor → ReceivesAction → turned on by signal	0.34
transistor → HasA → first current carrying electrode	0.34
transistor → IsA → a three-terminal device	0.34
base (aspect of transistor) → ReceivesAction → applied	0.33
base (aspect of transistor) → ReceivesAction → connected to the output of source	0.33
base (aspect of transistor) → MadeOf → rigid plastic	0.33
base (aspect of transistor) → MadeOf → copper-clad molybdenum	0.33
transistor → HasProperty → more reliable	0.33
transistor → HasProperty → cheaper	0.33
transistor → ReceivesAction → connected as bridge	0.32
transistor → HasA → diode	0.32
transistor → HasProperty → crucial	0.32
transistor → ReceivesAction → deactivated	0.32
transistor → CapableOf → use a carbon nanotube	0.32
transistor → ReceivesAction → referred as nand string	0.32
transistor → ReceivesAction → defined	0.32
transistor → HasA → two junctions	0.32
transistor → CapableOf → complete the circuit	0.32
transistor → ReceivesAction → used in microprocessor	0.32
transistor → CapableOf → turn on at same time	0.32
transistor → HasA → a threshold voltage	0.32
transistor → HasA → many uses	0.32
transistor → HasA → conventional transistors	0.32
transistor → ReceivesAction → connected to third junction	0.32
transistor → ReceivesAction → coupled to a switch node	0.32
transistor → ReceivesAction → coupled to light-emitting diode	0.32
transistor → HasProperty → active	0.32
terminal (aspect of transistor) → MadeOf → doped semiconductor material	0.31
terminal (aspect of transistor) → ReceivesAction → configured to receive reset scan signal	0.31
terminal (aspect of transistor) → ReceivesAction → coupled to local supply bus	0.31
terminal (aspect of transistor) → ReceivesAction → connected to common node	0.31
region (aspect of transistor) → CapableOf → overlap with the source	0.31
region (aspect of transistor) → HasA → quadrilateral shape	0.31
region (aspect of transistor) → ReceivesAction → bounded by outermost polysilicon stripes	0.31
pnp transistor (subgroup of transistor) → IsA → exact opposite	0.31
collector (aspect of transistor) → CapableOf → flow through the transistor	0.30
collector (aspect of transistor) → ReceivesAction → connected to emitter	0.30
transistor → ReceivesAction → burnt	0.30
transistor → CapableOf → act as buffer	0.30
transistor → HasA → same polarity	0.30
transistor → CapableOf → reach the limits of miniaturization	0.30
transistor → ReceivesAction → insulated	0.30
transistor → CapableOf → replace valve	0.30
transistor → ReceivesAction → formed of impurity-doped regions	0.30
transistor → ReceivesAction → used on other hand	0.30
transistor → ReceivesAction → coupled in stack	0.30
transistor → ReceivesAction → coupled to the plurality of reference networks	0.30
gain (aspect of transistor) → CapableOf → adjust mosfet	0.30
gain (aspect of transistor) → ReceivesAction → switched over to another one	0.30
transistor → CapableOf → generate less heat	0.29
transistor → CapableOf → generate great deal of heat	0.29
transistor → HasProperty → expensive	0.28
transistor → HasProperty → slower	0.28
transistor → ReceivesAction → substituted for q1	0.28
transistor → CapableOf → operate as pass gates	0.28
transistor → HasProperty → visible	0.28
transistor → ReceivesAction → protected	0.28
transistor → CapableOf → eliminate any crossover distortion	0.28
transistor → ReceivesAction → implemented into memory devices	0.28
transistor → HasProperty → free	0.28
transistor → CapableOf → energize the relay	0.28
transistor → CapableOf → configure the circuit element	0.28
transistor → MadeOf → amorphous silicon	0.28
transistor → CapableOf → comprise a semiconductor film	0.28
transistor → CapableOf → dissipate power	0.28
transistor → HasA → non-planar configuration	0.28
transistor → ReceivesAction → formed on a glass substrate	0.28
transistor → ReceivesAction → stacked	0.28
transistor → ReceivesAction → biased in sub-threshold region	0.28
transistor → IsA → n-channel metal oxide semiconductor nmostransistors	0.28
transistor → HasA → base current	0.28
transistor → CapableOf → generate an analog base-emitter voltage	0.28
transistor → ReceivesAction → powered by pulsed signals	0.28
transistor → ReceivesAction → used as oscillator	0.28
transistor → CapableOf → use narrowed sidewall spacers	0.28
transistor → HasA → superior performance characteristics	0.27
collector (aspect of transistor) → ReceivesAction → connected to the base of transistor	0.27
transistor → HasProperty → more efficient	0.26
transistor → CapableOf → voltage across both of them	0.25
transistor → CapableOf → receive same input signal	0.25
transistor → ReceivesAction → shown as particular dopant type	0.25
transistor → ReceivesAction → connected with now-conductive analog switches	0.25
transistor → ReceivesAction → charged	0.25
transistor → ReceivesAction → placed on 40 million	0.25
transistor → ReceivesAction → maintained	0.25
transistor → ReceivesAction → integrated on a p-type substrate	0.25
transistor → IsA → discrete devices	0.25
transistor → CapableOf → undergo rapid development	0.25
transistor → CapableOf → use etch	0.25
transistor → IsA → a 3v device	0.25
transistor → ReceivesAction → connected via serial lc circuit	0.25
transistor → CapableOf → consist of metal	0.25
transistor → HasPrerequisite → more voltage	0.25
transistor → CapableOf → switch load	0.25
transistor → HasProperty → cold	0.25
transistor → CapableOf → implement a logic function	0.25
transistor → HasA → two gates instead of one	0.25
transistor → CapableOf → operate in weak inversion	0.25
transistor → HasProperty → close	0.25
transistor → CapableOf → drive pixel	0.25
transistor → SimilarTo → previous one	0.25
transistor → ReceivesAction → included in memory module dimmk	0.25
transistor → HasA → small conductance	0.25
transistor → HasA → same channel length	0.25
transistor → ReceivesAction → based on quantum dots	0.25
transistor → ReceivesAction → used in telephone	0.25
transistor → CapableOf → act amplifier	0.25
transistor → CapableOf → discharge the capacitor	0.25
transistor → ReceivesAction → used in fuzz pedals	0.25
transistor → ReceivesAction → soldered	0.25
transistor → CapableOf → begin in 1970	0.25
transistor → ReceivesAction → viewed as one-way valves	0.25
transistor → ReceivesAction → omitted	0.25
transistor → ReceivesAction → surrounded by a p+ ring	0.25
transistor → ReceivesAction → scaled	0.25
transistor → CapableOf → connect to respective bottom patterns	0.25
transistor → ReceivesAction → operated in saturated mode	0.25
transistor → CapableOf → control the flow of electrons	0.25
transistor → CapableOf → provide a voltage level of vdd	0.25
transistor → ReceivesAction → released in early 2014	0.25
transistor → CapableOf → stand for transfer of resistance	0.25
transistor → CapableOf → share common transistor columnar structures	0.25
transistor → ReceivesAction → set in futuristic city	0.25
transistor → CapableOf → tr1 p-channel transistors	0.25
transistor → ReceivesAction → connected to the anode of the diode	0.25
transistor → HasA → second terminal	0.25
transistor → CapableOf → increase in temperature	0.25
transistor → CapableOf → provide the gate capacitance	0.25
transistor → ReceivesAction → contained in the boost sub	0.25
transistor → CapableOf → turn each other	0.25
transistor → ReceivesAction → controlled by the processor module	0.25
transistor → CapableOf → control the flow ofelectricity	0.25
transistor → ReceivesAction → included in a scrc driver	0.25
transistor → ReceivesAction → coupled to said first potential	0.25
transistor → HasA → 30 symbols of transistors	0.25
transistor → ReceivesAction → controlled by the string selection line	0.25
transistor → IsA → n-channel enhancement devices	0.25
bipolar transistor (subgroup of transistor) → ReceivesAction → used in audio pre	0.25
base (aspect of transistor) → ReceivesAction → grounded	0.25
base (aspect of transistor) → HasProperty → narrow	0.25
base (aspect of transistor) → ReceivesAction → held at positive supply potential vcc	0.25
base (aspect of transistor) → HasProperty → common	0.25
base (aspect of transistor) → IsA → the gate controller device	0.25
base (aspect of transistor) → ReceivesAction → formed	0.25
base (aspect of transistor) → HasA → top surface	0.25
characteristic (aspect of transistor) → ReceivesAction → shown in figure	0.25
characteristic (aspect of transistor) → ReceivesAction → shown in fig	0.25
collector (aspect of transistor) → ReceivesAction → connected to the base	0.25
collector (aspect of transistor) → ReceivesAction → connected to the antenna	0.25
collector (aspect of transistor) → ReceivesAction → connected to the supply terminal	0.25
collector (aspect of transistor) → ReceivesAction → connected to a constant-voltage power source	0.25
collector (aspect of transistor) → ReceivesAction → connected to the anode of diode	0.25
gain (aspect of transistor) → ReceivesAction → set	0.25
gain (aspect of transistor) → HasProperty → constant	0.25
gain (aspect of transistor) → ReceivesAction → calculated	0.25
gain (aspect of transistor) → ReceivesAction → provided by the circuit of fig	0.25
gain (aspect of transistor) → ReceivesAction → coupled to the filter	0.25
lead (aspect of transistor) → HasProperty → negative	0.25
lead (aspect of transistor) → ReceivesAction → supplied via an averaging circuit	0.25
lead (aspect of transistor) → UsedFor → pacing	0.25
lead (aspect of transistor) → UsedFor → sensing	0.25
lead (aspect of transistor) → ReceivesAction → identified	0.25
region (aspect of transistor) → CapableOf → comprise a plurality of recesses	0.25
region (aspect of transistor) → CapableOf → overlap with the drain	0.25
region (aspect of transistor) → CapableOf → display the routing setup report	0.25
region (aspect of transistor) → ReceivesAction → provided	0.25
region (aspect of transistor) → CapableOf → overlap with first power line	0.25
region (aspect of transistor) → ReceivesAction → provided with the material body	0.25
region (aspect of transistor) → ReceivesAction → identified with the reference number	0.25
terminal (aspect of transistor) → ReceivesAction → connected to the c-source line	0.25
terminal (aspect of transistor) → HasA → an input impedance	0.25
terminal (aspect of transistor) → ReceivesAction → positioned at two sides of the channel	0.25
terminal (aspect of transistor) → CapableOf → supply first power source	0.25
terminal (aspect of transistor) → ReceivesAction → coupled to the lna	0.25
terminal (aspect of transistor) → ReceivesAction → shown in fig	0.25
terminal (aspect of transistor) → ReceivesAction → used to connect to external circuit	0.25
terminal (aspect of transistor) → ReceivesAction → measured	0.25
terminal (aspect of transistor) → ReceivesAction → configured to receive first power voltage	0.25
terminal (aspect of transistor) → ReceivesAction → connected via first switch	0.25
terminal (aspect of transistor) → CapableOf → go to the hlevel	0.25
integrated circuit (subgroup of circuit) → HasA → transistor	0.25
transistor → CapableOf → heat up thermal runaway condition	0.23
transistor → HasSubevent → less resistance	0.23
transistor → ReceivesAction → used to provide exceptional speed performance	0.23
transistor → CapableOf → become unstable	0.23
transistor → CapableOf → use three-dimensional structure	0.21
transistor → CapableOf → hamper chip and pc design	0.21
transistor → CapableOf → hamper size	0.21
transistor → CapableOf → hamper power consumption	0.21
transistor → CapableOf → hamper noise	0.21
transistor → CapableOf → hamper cost	0.21
transistor → ReceivesAction → substituted for t1	0.21
transistor → ReceivesAction → connected to the source testing line	0.20
transistor → ReceivesAction → compared to other low noise packages	0.19
transistor → ReceivesAction → put into high-volume manufacturing	0.19
transistor → HasProperty → cooler	0.19
transistor → HasProperty → transparent	0.19
transistor → HasProperty → good npn	0.16
transistor → HasProperty → good pnp	0.16
transistor → ReceivesAction → packed into same space	0.16
transistor → ReceivesAction → wired	0.16
transistor → CapableOf → allow for more compact formats	0.16
transistor → CapableOf → build logic gates	0.16
transistor → CapableOf → work in solid electrolyte	0.16
transistor → ReceivesAction → used to provide very-high-input impedance	0.16
transistor → ReceivesAction → used to provide very-low-input current	0.16
transistor → HasProperty → simple	0.16
transistor → CapableOf → emit light	0.16
transistor → CapableOf → share the 1956 nobel prize	0.16
bipolar transistor (subgroup of transistor) → ReceivesAction → susceptible to thermal damage than most	0.16
npn transistor (subgroup of transistor) → CapableOf → switch loads of higher current	0.16
base (aspect of transistor) → HasProperty → more negative than the emitter	0.16
collector (aspect of transistor) → CapableOf → occur in case	0.09