| trench → ReceivesAction → formed in the substrate | 0.46 | |
region
(aspect of
transistor)
→
ReceivesAction
→
formed in the substrate
|
0.40 | |
| aperture → ReceivesAction → formed in the substrate | 0.39 | |
| region → ReceivesAction → formed in the substrate | 0.33 | |
| recess → ReceivesAction → formed in the substrate | 0.33 |